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| BFG 235 NPN Silicon RF Transistor * For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA * Power amplifiers for DECT and PCN systems * Integrated emitter ballast resistor * fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 235 BFG235 Q62702-F1432 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 300 40 mW 2000 150 - 65 ... + 150 - 65 ... + 150 35 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 80 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 120 - V A 200 nA 100 A 2 50 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 200 mA, VCE = 5 V Semiconductor Group 2 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4 5.5 2.6 1.5 15 - GHz pF 3.6 dB 2.7 - IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 60 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt Power gain 2) Gma |S21e|2 6 dBm 40 12 - IC = 200 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Third order intercept point IP3 IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 235 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 2200 mW Ptot 1800 1600 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 TS TA 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 K/W RthJS 10 1 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-13-1996 BFG 235 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 7 6.0 5V GHz pF Ccb 5 fT 5.0 4.5 1V 4.0 3.5 4 3 3.0 2.5 2.0 0.7V 2 1 1.5 0 0 4 8 12 16 V VR 22 1.0 0 50 100 150 200 mA IC 300 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 13 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 9 dB dB 10V 5V G 11 3V G 7 3V 6 2V 5 10 2V 9 4 8 1V 3 7 2 1 0 0 50 100 150 200 mA IC 300 0 50 100 150 200 mA IC 300 0.7V 1V 6 5 0.7V Semiconductor Group 5 Dec-13-1996 BFG 235 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 14 VCE = Parameter, f = 900MHz 42 10V 8V IC=200mA dB 0.9GHz dBm 38 G 10 IP 3 36 34 32 5V 8 30 1.8GHz 0.9GHz 28 26 24 22 2V 3V 6 4 20 18 1V 2 0 0 2 4 6 8 V 12 16 14 12 0 50 100 150 200 V CE mA IC 300 Power Gain Gma, Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=200mA dB dB IC=200mA G S21 20 20 15 15 10 5 10 0 5 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 -5 -10 0.0 0 0.0 Semiconductor Group 6 Dec-13-1996 |
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